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| Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -60 -80 -60 -80 -6 -5 -3 15 2.0 150 -55 to +150 Unit V 2.50.2 s Absolute Maximum Ratings 13.00.2 4.20.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25C) 5.00.1 10.00.2 1.0 90 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 emitter voltage 2SB1417A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A C1.0 123 2.50.2 2.50.2 W C C 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1417 2SB1417A 2SB1417 2SB1417A 2SB1417 2SB1417A (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 VCE = -60V, IB = 0 VEB = -6V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -3A, IB = - 0.375A VCE = -5V, IC = - 0.2A, f = 10MHz IC = -1A, IB1 = - 0.1A, IB2 = 0.1A, VCC = -50V 30 0.3 1.0 0.2 -60 -80 70 10 -1.8 -1.2 V V MHz s s s 250 min typ max -100 -100 -100 -100 -100 Unit A A A V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors PC -- Ta 20 -6 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 TC=25C -5 2SB1417, 2SB1417A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=8 -30 -10 -3 -1 TC=-25C 100C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) IB=-100mA -4 -90mA -80mA -70mA -60mA -50mA -40mA -30mA 10 (1) -3 -2 -20mA - 0.3 - 0.1 - 0.03 5 -10mA -1 25C (2) 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) IC -- VBE -6 VCE=-4V 100000 hFE -- IC 10000 VCE=-4V 3000 1000 300 100 30 10 3 fT -- IC VCE=-5V f=10MHz TC=25C Forward current transfer ratio hFE -5 10000 -4 TC=100C 3000 1000 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C -25C 25C -3 -2 25C -1 -25C 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Transition frequency fT (MHz) -3 -10 30000 Collector current IC (A) -1 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Base to emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=-IB2) VCC=-200V TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 10 3 1 0.3 0.1 0.03 tstg Collector current IC (A) -10 ICP -3 -1 IC 10ms DC t=1ms 100 30 10 ton - 0.3 - 0.1 - 0.03 - 0.01 -1 3 1 -1 0.01 -3 -10 -30 -100 0 -1 -2 -3 -4 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1417A tf 2SB1417 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SB1417, 2SB1417A Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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